in neon t echnologies, corp. optoelectronics division cupertino, ca (formerly siemens microelectronics, inc.) www .in neon.com/opto 1-800-777-4363 1 april 29, 1999 fea tures ? operating t emperature rang e , C 55 c to +125 c ? current t ransf er ratio guaranteed fr om C 55 c to +100 c ambient t emperature rang e ? high current t ransf er ratio at lo w input current ? isolation t est v olta g e , 3000 v dc ? base lead a v ailab le f or t ransistor biasing ? standar d 8 pin dip p ac ka g e description the ILH100 is designed especially for hi-r el applica- tions r equiring optical isolation with high curr ent trans- fer ratio and low saturation v ce . each optocoupler consists of a light emitting diode and a npn silicon phototransistor mounted and coupled in an 8 pin her - metically sealed dip package. the ILH100's low input curr ent makes it well suited for dir ect cmos to lsttl/ ttl inter faces. maxim um ratings emitter reverse v oltage ............................................................ .................... 6.0 v forwar d curr ent ............................................................ .................. 60 ma peak forwar d curr ent (1) ............................................................ ...... 1.0 a power dissipation ............................................................ ............ 150 mw derate linearly fr om 25 c ....................................................... 1.5 mw/ c detector collector emitter v oltage ............................................................ ...... 70 v emitter base v oltage ............................................................ ............ 7.0 v collector base v oltage ............................................................ ........ 70 v continuous collector curr ent ......................................................... 50 ma power dissipation ............................................................ ............ 300 mw derate linearly fr om 25 c ....................................................... 3.0 mw/ c pa c k a g e input output isolation t est v oltage (2) .................................... 3000 vdc storage t emperatur e range ......................................... 65 c to +150 c operating t emperatur e range ...................................... 55 c to +125 c junction t emperatur e ............................................................ ......... 150 c soldering time at 240 c, 1.6 mm fr om case ................................. 10 sec. power dissipation ............................................................ ............ 350 mw derate linearly fr om 25 c ....................................................... 3.5 mw/ c notes: 1. v alues applies for p w 1.0 ms, prr 300 pps. 2. measur ed between pins 1,2,3 and 4 shor ted together and pins 5,6,7 and 8 shor ted together . t a =25 c and duration=1.0 second, rh=45%. dimensions in inches (mm) .390 .005 1 2 3 4 8 7 6 5 siemens xxx xxxx xxyy .320 (8.13) max. .125 (3.18) min. .018 .002 (.46 .05) .100 .010 (2.54 .25) .020 (.51) min. .150 (3.81) max. .010 .002 (.25 .05) .300 (7.62) typ. (9.91 .13) cathode anode base 7 collector emitter 6 5 3 2 ILH100 hermetic phototransistor optocoupler gy , ,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH100 www.in?neon.com/opto ? 1-800-777-4363 2 april 29, 1999 characteristics t a =25c, unless otherwise speci?ed typical switching speeds t a =25c parameter symbol min. typ. max. unit condition emitter forward voltage v f 1.45 1.7 v i f =60 ma reverse breakdown voltage v br 6.0 i r =10 m a reverse current i r 0.01 10 m a v r =6.0 v capacitance c j 20 pf v f =0 v, f=1.0 mhz thermal resistance r th 220 c/w junction to lead detector collector-emitter saturation voltage v ce (sat) 0.25 0.4 v i b =20 m a, i ce =1.0 ma base-emitter voltage v be 0.65 i b =20 m a collector-emitter leakage current i ceo 5.0 50 na v ce =10 v dc forward current gain hfe 250 400 750 v ce =10 v, i b =20 m a saturated dc forward gain hfe (sat) 125 200 325 v ce =0.4 v, i b =20 m a capacitance c ce 6.8 pf v ce =5.0 v, f=1.0 mhz c cb 8.5 c eb 11 thermal resistance r th 220 c/w junction to lead coupled characteristics (C55c to 100 c) saturated current transfer ratio ctr (sat) 70 210 250 % i f =10 ma, v ce =0.4 v current transfer ratio, collector-emitter cte ce 100 300 450 % i f =10 ma, v ce =10 v current transfer ratio, collector-base ctr cb 0.4 0.7 0.9 i f =10 ma, v cb =9.3 v isolation and insulation common mode rejection output high cm h 1000 2000 v/ m sv cm =500 v p-p , v cc =5.0 v, r l =1.0 k w , i f =0 ma common mode rejection output low cm l 1000 2000 v/ m sv cm =500 v p-p , v cc =5.0 v, r l =1.0 k w , i f =10 ma package capacitance c io 1.5 pf v io =0 v, 1.0 mhz insulation resistance r io 10 11 10 14 w v io =500 vdc leakage current, input-output i io 10 m a relative humidity 50%, v io 3000 vdc, 5.0 sec. non-saturated switching symbol typ. max. unit test condition delay t d 0.8 2.0 m s rise t r 2.0 5.0 v cc =5.0 v storage t s 0.4 1.5 r l =75 w fall t f 2.0 5.0 i f =10 ma propagation-high to low t phl 1.0 3.0 50% of v pp propagation-low to high t plh 1.5 4.0 r be =open saturated switching (1) symbol typ. max. test condition delay t d 0.7 2.0 v ce =0.4 v rise t r 1.0 3.0 v ce =0.4 v storage t s 13.5 30 r l =1.0 k w fall t f 12 i f =10 ma propagation-high to low t phl 1.4 5.0 v cc =5.0 v v th =1.5 v propagation-low to high t plh 15 40 r be =open gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH100 www.in?neon.com/opto ? 1-800-777-4363 3 april 29, 1999 figure 4. normalized non-saturated current transfer ratio versus temperature and led current figure 5. normalized saturated current transfer ratio versus temperature and led current figure 6. normalized saturated current transfer ratio versus temperature and led current figure 7. collector-emitter current versus temperature and led current 125 100 75 50 25 0 -25 -50 0.2 0.4 0.6 0.8 1.0 1.2 .5 ma 1 ma 5 m a 10 m a ta - ambient temperature - c nctrce - normalized ctr normalized to: ta = 25 c vce = 10v, if = 10 ma 125 100 75 50 25 0 -25 -50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 m a 20 ma 30 ma 60 ma ta - ambient temperature - c nctrce - normalized ctr normalized to: ta = 25c vce = 10v, if = 10 ma vce = 10 v 125 100 75 50 25 0 -25 -50 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.5 ma 1 ma 5 ma 10 ma ta - ambient temperature - c nctrce(sat) - normalized saturated ctr normalized to ta =25c vce = 10 v, if = 10 ma vce = 0.4 v 125 100 75 50 25 0 -25 -50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 m a 20 m a 30 ma 60 m a ta - ambient temperature - c nctr(sat)- normalized saturated ctr normalized to: ta = 25 c vce = 10 v , if = 10 ma vce = 0.4 v figure 1. switching time waveform and test schematic non-saturated test condition figure 2. forward current versus forward voltage and temperature figure 3. peak led current versus duty factor refresh rate and temperature v out t r 90% t f 10% input i f 0 pulse width=100 m s duty cycle=1 % v cc 100 w v out i f r l 1.8 1.6 1.4 1.2 1.0 0.8 .1 1 10 100 -55? -25? 0? 25? 85? 125? vf - forward voltage - v if - forward current - ma 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 df - duty factor - if(pk) - peak led current - a 10khz 1khz 100 hz 10khz 1khz 100hz 60 ma 25c 125c tj(max) = 150c gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH100 www.in?neon.com/opto ? 1-800-777-4363 4 april 29, 1999 figure 12. normalized collector base crt versus temper- ature and led current figure 13. normalizied icb photocurrent versus tempera- ture and led current figure 14. normalized non-saturated and saturated hfe at t a =25c versus base current figure 15. normalizied non-saturated and saturated hfe at t a =50c versus base current 100 10 1 .1 0. 0 0. 5 1. 0 1. 5 -55c -25c 0c 25c 85c 125c if - led current - ma nctrcb - normalized ctrcb normalized to: if = 10ma, ta =25c vcb = 9.3v 10 0 10 1 .1 .001 .01 .1 1 10 if - led current - m a nicb - normalized photocurrent normalized to: if = 10 ma, ta = 25c vcb = 9.3v -55 c -25 c 0c 25 c 85 c 125c if - led current - ma ib - base current - 1000 100 10 1 0.0 0.5 1.0 1.5 nhfe nhfe(sat) normalized to: ib = 20a, vce=10v ta=25c vce = 0.4v vce = 10v nhfe - normalized hfe 1000 100 10 1 0.0 0.5 1.0 1.5 ib - base current - nhfe nhfe - normalized hfe nhfe(sat) vce = 0.4v vce = 10v normalized to: ib = 20a, vce=10v ta=25c figure 8. collector-emitter current versus temperature and led current figure 9. collector-emitter current versus temperature and led current figure 10. saturated collector-emitter current versus temperature and led current figure 11. saturated collector-emitter current versus temperature and led current 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 ma 1 ma 5 ma 10 m a ta - ambient temperature - c ice - collector current - ma vce = 10 v 125 100 75 50 25 0 -25 -50 0 50 100 150 200 60 ma 30 ma 20 ma 10 ma ta - ambient temperature - c ice - collector current - ma vce = 10 v 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 ma 1 m a 5 m a 10 m a 20 m a 30 m a 60 ma ta - ambient temperature - c ice - collector current - ma vce = 0.4 v 125 100 75 50 25 0 -25 -50 .1 1 10 100 0.5 ma 1 ma 5 ma 10 ma ta - ambient temperature - c ice - collector current - ma vce = 0.4 v gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH100 www.in?neon.com/opto ? 1-800-777-4363 5 april 29, 1999 figure 16. normalized non-saturated and saturated hfe at t a =70c versus base current figure 17. collector-emitter leakage current versus temperature figure 18. base emitter voltage versus base current figure 19. base emitter capacitance versus base emitter voltage 1000 100 10 1 0.0 0.5 1.0 1.5 ib - base current - a nhfe nhfe(sat) normalized to: ib = 20a, vce=10v ta=25c vce = 0.4v vce = 10v nhfe - normalized hfe 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 - 2 -1 0 1 2 3 4 5 ta - ambient temperature - iceo - collector-emitter - na worst case typical vce = 10v ta - ambient temperature - c 0.8 0.7 0.6 0.5 0.4 .001 .01 .1 1 10 100 1000 g vbe - base emitter volta g e - v ib - base current - a ta = 25c 0.8 0.7 0.6 0.5 0.4 0.3 0. 2 0.1 0.0 10 100 1000 10000 vbe - base emitter voltage - cbe -base emitter capacitance - pf b ase-em itt er capac it ance versus b ase-em itt er vo lta figure 20. propagation delay versus temperature and collector load resistance for i f =5.0 ma figure 21. propagation delay versus temperature and collector load resistance for i f =10 ma figure 22. propagation delay versus temperature and collector load resistance for i f =20 ma figure 23. propagation delay versus temperature and collector load resistance for i f =5.0 ma 125 100 75 50 25 0 -25 -50 1 10 100 100 0 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = open, vth = 1.5 v 125 100 75 50 25 0 -25 -50 1 10 100 100 0 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = open, vth = 1.5 v 125 100 75 50 25 0 -25 -50 1 10 100 100 0 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tph l 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = open, vth = 1.5 v 12 5 100 75 50 25 0 -25 -50 0 5 10 15 20 25 30 47k w tphl 47k w tplh 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = 47k w , vth = 1.5 v gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH100 www.in?neon.com/opto ? 1-800-777-4363 6 april 29, 1999 figure 4. propagation delay versus collector load and base-emitter resistance for i f =5.0 ma figure 5. propagation delay versus collector load and base-emitter resistance for i f =5.0 ma figure 6. propagation delay versus collector load and base-emitter resistance for i f =10 ma figure 7. propagation delay versus collector load and base-emitter resistance for i f =10 ma 100000 1000 0 1000 100 1 10 100 1000 open(tphl) open(tplh) 1m w (tphl) 1m w (tplh) 470k(tphl) 470k ( tplh ) 100k w (tphl) 100k w (tplh) rl - collector load resistor - w propagation delay - s base-emitter resistor ta = 25c if = 5 ma vcc = 5.25v vth = 1.5v 100000 10000 1000 100 0 5 10 15 20 rl - collector load resistor - w propagation delay - s 8 2k w (tphl) 8 2k w (tplh) 4 7k w (tphl) 4 7k w ( tplh ) 3 3k w (tphl) 3 3k w ( tplh ) 2 2k w (tphl) 2 2k w (tplh) base-emitter resistor ta = 25 c if = 5 ma vcc = 5.25v vth = 1.5v rl - collector load resistor - w 100000 10000 1 000 100 1 10 100 1000 o pen (tph l) o pen (tpl h) 1m w (tphl) 1m w (t plh) 4 70k(t phl) 4 70k(t plh) 1 00k w (t ph l) 1 00k w (t pl h) 82k w (t phl ) 82k w (t plh ) rl - collector load resistor - w propagation delay - s ta = 25c if = 10 ma vcc = 5.25 v vth = 1 .5 v base-emi tter resistor 100000 10000 1000 100 0 5 10 15 47k w (tphl) 47k w (tplh) 33k w (tphl) 33k w (tplh) 22k w (tphl) 22k w (tplh) 15k w (tphl) 15k w (tphl) 10k w (tphl) 10k w (tplh) rl - collector load resistor - w propagation delay - s base-emitter resistor ta = 25 c if = 10 ma vcc = 5.25 v vth = 1.5 v figure 1. switching time waveform and test schematic saturated test condition figure 2. propagation delay versus temperature and col- lector load resistance for i f =10 ma figure 3. propagation delay versus temperature and collector load resistance for i f =20 ma i f v o v th =1.5 v t phl t plh r l v o v cc r be 125 100 75 50 25 0 -25 -50 0 5 10 15 20 25 30 47k w tphl 10k w tphl 10k w tplh 2.2k w tphl 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25, rbe = 47k w vth = 1.5v 47k w tpl h 125 100 75 50 25 0 -25 -50 0 5 10 15 20 25 30 35 47k w tphl 10k w tphl 10k w tplh 2.2k w tph l 2.2k w tplh ta - ambient temperature - c propagation delay - s vcc = 5.25v, rbe = 47k w vth = 1.5 v 47k w tplh gy,,
in?neon technologies, corp. ? optoelectronics division ? cupertino, ca (formerly siemens microelectronics, inc.) ILH100 www.in?neon.com/opto ? 1-800-777-4363 7 april 29, 1999 figure 11. propagation delay versus collector load and base-emitter resistance for i f =15 ma figure 12. common mode transient rejection 100000 10000 1000 100 .1 1 10 100 1000 open(tphl) open(tplh) 1m w (tphl) 1m w ( tplh ) 470k w (tphl) 470k w ( tplh ) 100k w (tphl) 100k w (tplh) 82k w (tphl) 82k w (tplh) rl - collector load resistor - w propagation delay - s ta = 25c if = 20 ma vcc = 5.25v vth = 1.5 v 2200 2000 1800 1600 1400 1200 1000 0 5000 10000 15000 20000 25000 vcm - common mode voltage - v rate of common mode voltage change - v/s ta = 25 c, vcc = 5.0v if(l) = 10 ma, rl = 1k w if(h) = 0 ma cmr-h cmr-l figure 8. propagation delay versus collector load and base-emitter resistance for i f =15 ma figure 9. propagation delay versus collector load and base-emitter resistance for i f =15 ma figure 10. propagation delay versus collector load and base-emitter resistance for i f =15 ma 100000 10000 1000 100 .1 1 10 100 1000 open(tphl) open(tplh) 1m w (tphl) 1m w ( tplh ) 470k w (tphl) 470k w (tplh) 100k w (tphl) 100k w (tplh) 82k w (tphl) 82k w (tplh) rl - collector load resistor - w propagation delay - s ta = 25c if = 15 ma vcc = 5.25 v vth = 1.5 v base-emitter resistor 100000 10000 1000 100 0 5 10 15 47k w (tphl) 47k w ( tplh ) 33k w (tphl) 33k w (tplh) 22k w (tphl) 22k w ( tplh ) 15k w (tphl) 15k w (tplh) 10k w ( tphl ) 10k w (tplh) 8.2k w (tphl) 8.2k w (tplh) rl - collector load resistor - w propagation delay - s base-emitter emitter ta = 25c if = 15 ma vcc = 5.25v vth = 1.5 v 100000 10000 1000 100 0 5 10 15 20 47k w (tphl) 47k w (tplh) 33k w (tphl) 33k w (tplh) 22k w (tphl) 22k w (tplh) 15k w (tphl) 15k w (tplh) 10k w (tphl) 10k w (tplh) 8.2k w (tphl) 8.2k w (tplh) rl - collector load resistor - w propagation delay - s ta = 25c if = 20 ma vcc = 5.25v vth = 1.5 v gy,,
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